Journal
JOURNAL OF CRYSTAL GROWTH
Volume 220, Issue 4, Pages 510-514Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/S0022-0248(00)00851-4
Keywords
Czochralski method; beta-Ga2O3; gas-phase calculations
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We report on the successful growth of beta -Ga2O3 single crystals using the Czochralski method. Model calculations show that the gas phase consists of Ga2O, GaO or Ga independent of the ratio of oxygen and Ar or N-2. We find that for growing single crystals the evaporation has to be suppressed by a finite amount of oxygen. A CO2/Ar gas atmosphere was found to meet this requirement. (C) 2000 Elsevier Science B.V. All rights reserved.
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