A model of amorphous tetrahedrally coordinated semiconductors based on deformed nanocrystals

The radial distribution function (RDF) of amorphous Ge and Si is calculated by assuming that the materials consist of elastically deformed nanocrystals of diameter about 3 nm. Good agreement with the experimental RDF is achieved, in particular for deformed hexagonal rather than cubic nanocrystals. This model provides a continuous connection from amorphous via nanocrystalline to coarse-grained crystalline materials.