Journal
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
Volume 39, Issue 12B, Pages 7000-7002Publisher
JAPAN SOC APPLIED PHYSICS
DOI: 10.1143/JJAP.39.7000
Keywords
ferroelectric thin film; interfacial layer; excess Pb; fatigue
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Ferroelectric Pb(ZrxTi1-x)O-3 PZT thin film capacitors with Pt(111)/SiO2/Si substrate were fabricated by sol-gel method. ultrathin PZT layer containing various contents of excess Pb was adopted as an interfacial layer to investigate the role of excess Ph on the formation of inter-facial region between PZT film and Pt bottom electrode. An improvement of electrical properties was observed according to the content of excess Pb in interfacial PZT layer due to the inhibition of inter-diffusion at film-substrate interface as well as defect formation. The formation of Ti-rich PZT at the initial stage of anneal due to excess Ph was responsible for the excellent ferroelectric characteristic. This implied that the role of excess Ph in film-substrate interface was of significance to the long-term reliability.
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