Laser deposition of thin SiO2 and ITO films

Multicomponent films like ITO (indium tin oxide) and silica (SiO2) can be efficiently deposited by using the reactive pulsed laser deposition (RPLD) technique. We ablated Si, SiO and ITO targets in low-pressure O-2 (0.1-5 Pa) with XeCl and KrF laser pulses at fluences of 5-8 J/cm(2). The films were deposited on Si[100] substates at temperatures of 20-600 degreesC. The substrate was generally see parallel to the target. To reduce droplet deposition, some films were deposited in off-axis configuration or using the so-called eclipse method, characterized by a shadow mask between target and substrate. Dense, continuous ITO films with resistivity as low as 1.6 ic 10(-4) Omega cm and a high transparency in the visible region were deposited. Ultra-thin (similar to6 nm) films were successfully used as electrodes in optoelectronic devices. Dense, stoichiometric, thick (>2 mum) SiO2 films were deposited on substrates at room temperature. Droplet density and surface roughness are kept quite low (similar to5 nm). (C) 2000 Elsevier Science B.V. All rights reserved.