Journal
SURFACE SCIENCE
Volume 470, Issue 1-2, Pages 121-130Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/S0039-6028(00)00847-5
Keywords
molybnenum oxides; aluminum oxide; silicon oxides; diffusion and migration; X-ray photoelectron spectroscopy; secondary ion mass spectroscopy; synchrotron radiation photoelectron spectroscopy
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By means of XPS, SIMS, synchrotron radiation excited total-reflection X-ray fluorescence, AES etc., the diffusion process of MoO3 on stable Al2O3 and SiO2 oxide thin films was investigated. After thermal treatment, MoO3 formed a monolayer or a submonolayer on the hat surface of the thin films. The diffusion capacity and the diffusion rate on these two kinds of films differ significantly. Besides the support used, several factors, such as the heating temperature, the heating time and the ambience influence the diffusion process. A possible explanation to all the phenomena is the combination of surface diffusion and transportation via gas phase. (C) 2000 Elsevier Science B.V. All rights reserved.
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