Journal
SURFACE SCIENCE
Volume 470, Issue 1-2, Pages 32-42Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/S0039-6028(00)00832-3
Keywords
density functional calculations; silicon; quantum wells; superlattices
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The Si layer thickness dependence of the optical properties of silicon/silicon dioxide (Si/SiO2) superlattices has been, for the first time, theoretically investigated. In our first principle calculation we consider both fully passivated interfaces and the presence of oxygen vacancy at the interface. Our results show the key role played both by the quantum confined states and interface states in the experimentally observed visible luminescence in Si/SiO2 confined systems. (C) 2000 Elsevier Science B.V. All rights reserved.
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