Journal
THIN SOLID FILMS
Volume 380, Issue 1-2, Pages 32-35Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/S0040-6090(00)01465-6
Keywords
germanium; silicium; carbon; RHEED; AFM; growth mode
Ask authors/readers for more resources
Strong Ge morphological modifications were observed upon an ordered C-pre-covered Si(001)-c(4 x 4) reconstructed surface used as a template as compared to the growth on bare Si(001)-(2 x 1) substrates. While on bare substrates, the Ge wetting layer of the Stranski-Krastanov mode has a critical thickness of approximately 3-4 monolayers (ML), with the c-(4 x 4) template, island nucleation already occurs after 1 Ge ML and growth proceeds in a Volmer-Weber mode. This suggests that the C-rich surface derm associated with the c-(4 x 4) reconstruction is able to strongly affect the Ge wetting. (C) 2000 Elsevier Science B.V. All rights reserved.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available