Journal
APPLIED PHYSICS LETTERS
Volume 78, Issue 3, Pages 332-334Publisher
AMER INST PHYSICS
DOI: 10.1063/1.1338970
Keywords
-
Categories
Ask authors/readers for more resources
Deep centers and dislocation densities in undoped n GaN, grown by hydride vapor phase epitaxy (HVPE), were characterized as a function of the layer thickness by deep level transient spectroscopy and transmission electron microscopy, respectively. As the layer thickness decreases, the variety and concentration of deep centers increase, in conjunction with the increase of dislocation density. Based on comparison with electron-irradiation induced centers, some dominant centers in HVPE GaN are identified as possible point defects. (C) 2001 American Institute of Physics.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available