Interdiffusion of CdS/CdTe thin films: Modeling x-ray diffraction line profiles

A method for analyzing the diffusion process for CdS into CdTe thin films using x-ray diffraction is presented, allowing both bulk and grain boundary diffusion coefficients to be estimated. The equilibrium phase diagram for the CdTe1-xSx and CdS1-yTey alloy system was determined for temperatures from 625 degreesC to 415 degreesC. Measured diffraction line profiles for time-progressive diffusion of CdS into CdTe films resulting from thermal treatment at 440 degrees were modeled using bulk and grain boundary diffusion coefficients of 1.25x10(-13) cm(2)/s and 1.5x10(-8) cm(2)/s, respectively. Modeling diffraction line profiles of samples treated at temperatures from 380 degreesC to 480 degreesC yielded Arrhenius activation energies for bulk and grain boundary diffusion processes of 2.8 eV and 2.0 eV, respectively. The bulk diffusion coefficients obtained from thin film structures were comparable to those obtained by Auger depth profiles for CdS/CdTe couples using CdTe single crystals. (C) 2001 American Institute of Physics.