Very-low-operating-voltage organic light-emitting diodes using a p-doped amorphous hole injection layer

We demonstrate the use of a p-doped amorphous starburst amine, 4, 4', 4-tris(N, N-diphenyl- amino)triphenylamine (TDATA), doped with a very strong acceptor, tetrafluoro- tetracyano-quinodimethane by controlled coevaporation as an excellent hole injection material for organic light-emitting diodes (OLEDs). Multilayered OLEDs consisting of double hole transport layers of p-doped TDATA and triphenyl-diamine, and an emitting layer of pure 8-tris-hydroxyquinoline aluminum exhibit a very low operating voltage (3.4 V) for obtaining 100 cd/m(2) even for a comparatively large (110 nm) total hole transport layer thickness. (C) 2001 American Institute of Physics.