Journal
APPLIED PHYSICS LETTERS
Volume 78, Issue 4, Pages 518-520Publisher
AMER INST PHYSICS
DOI: 10.1063/1.1343497
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The reduction in coercive force by light illumination has been found in ferromagnetic semiconductor heterostructure p-(In, Mn)As/GaSb prepared by molecular-beam epitaxy. Enhanced ferromagnetic coupling between Mn ions, arising from excess photogenerated holes, reduces the domain wall energy and changes the magnetization hysteresis characteristics. The value of coercive force returns to the original value when excess holes recombine with trapped electrons. (C) 2001 American Institute of Physics.
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