Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 48, Issue 2, Pages 279-284Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/16.902727
Keywords
box method; density gradient method; multidimensional device simulation; quantum corrections; semiconductor-device modeling
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We describe an implementation of the density-gradient device equations which is simple and works in any dimension without imposing additional requirements on the mesh compared to classical simulations. It is therefore applicable to real-world device simulation with complex geometries. We use our implementation to determine the quantum mechanical effects for a MOS-diode, a MOSFET and a double-gated SOI MOSFET. The results are compared to those obtained by a 1D-Schrodinger-Poisson solver. We also investigate a simplified variant of the density-gradient term and show that, while it can reproduce terminal characteristics, it does not give the correct density distribution inside the device.
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