Journal
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES
Volume 9, Issue 2, Pages 305-309Publisher
ELSEVIER
DOI: 10.1016/S1386-9477(00)00202-2
Keywords
Si nanowires; quantum confinement effect; low dimensionality
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Highly oriented amorphous silicon nanowires (a-SiNWs) were grown on Si (111). The length and diameter of oriented SiNWs are almost uniform, which are 1 mum and 25 nm, respectively. Different from the well-known vapor-liquid-solid (VLS) for conventional whisker growth, it was found that growth of the a-SiNWs was controlled by a solid-liquid-solid mechanism (SLS). This synthesis method is simple and controllable. It may be useful in large-scale synthesis of various nanowires. (C) 2001 Elsevier Science B.V. All rights reserved.
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