Journal
APPLIED PHYSICS LETTERS
Volume 78, Issue 6, Pages 733-735Publisher
AMER INST PHYSICS
DOI: 10.1063/1.1344565
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Transverse spin lifetimes of spin-polarized photogenerated carriers in InAs self-assembled quantum dots are extracted from the depolarization of their photoluminescence in a magnetic field perpendicular to the spin (the Hanle effect). Hanle measurements on a series of samples reveal that the dot dimensions influence the spin lifetime and its dependence on temperature. The spin lifetime as a function of excitation intensity is qualitatively distinct for carrier spins created in the GaAs host as compared to in the InAs wetting layer. (C) 2001 American Institute of Physics.
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