Journal
MATERIALS CHEMISTRY AND PHYSICS
Volume 68, Issue 1-3, Pages 266-271Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/S0254-0584(00)00370-9
Keywords
tantalum nitride; reactive sputtering; diffusion barrier
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Tantalum nitride (TaN) films are deposited on silicon substrates by radio frequency (RF) reactive sputtering of Ta in N-2/Ar gas mixtures at a bias of 0 V. The deposition rate, chemical composition, and crystalline microstructure are investigated by cross-sectional transmission electron microscopy (XTEM), X-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES), X-ray diffraction (XRD), and atomic force microscopy (AFM), respectively. According to those results, the deposition rate, film composition, and microstructure correlate with the N-2/Ar flow ratio. In addition, the deposition mechanism which controls the film characteristics is presented as well. (C) 2001 Elsevier Science B.V. All rights reserved.
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