Zeeman spin splittings in semiconductor nanostructures

A systematic theoretical and experimental study of Zeeman spin splittings and g factors in semiconductor nanostructures is given. Six-band effective-mass calculations of electron, hole, and exciton spin splittings are made and are shown to account for experimental results presented here on In0.10Ga0.90As/GaAs systems for the size dependences of g factors in deep-etched quantum dots and wires and for the magnetic-field dependences of the Zeeman splittings in quantum wells. These effects are traced to band mixing, and an analytic form of the results is given that connects these two effects and describes their dependences on dimensionality.