Journal
SENSORS AND ACTUATORS B-CHEMICAL
Volume 73, Issue 1, Pages 35-39Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/S0925-4005(00)00659-6
Keywords
gas sensor; chalcogenide semiconductors; environmental monitoring
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For the first time it is shown, that tellurium based thin films exhibit high sensitivity to nitrogen dioxide at room temperature. The resistance of the tellurium films decreases reversibly in the presence of NO2. The sensitivity of this device depends on the gas concentration and it increases to lower concentrations less than 3 ppm. The response time is considerably short and in the range of 2-3 min. (C) 2001 Elsevier Science B.V. All rights reserved.
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