Journal
JOURNAL OF NUCLEAR MATERIALS
Volume 290, Issue -, Pages 389-393Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/S0022-3115(00)00580-8
Keywords
defects; deuterium; deuterium depth profiling; deuterium retention; tungsten
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Depth profiles of D atoms and D-2 molecules in a W single crystal implanted with 6 keV D ions at 300 K have been determined using secondary ion mass spectrometry (SIMS) and residual gas analysis (RGA) measurements in the course of surface sputtering. Profiles of deuterium and lattice damage in a W single crystal irradiated with 10 keV D ions at 300 K have been investigated by means of nuclear reaction analysis (NRA) and Rutherford backscattering spectrometry combined with ion channelling techniques (RBS/C), There are at least two types of ion-induced defects which are responsible for trapping of deuterium: (i) D-2-filled microvoids (deuterium bubbles) localised in the implantation zone; and (ii) dislocations which are distributed from the surface to depths far beyond 1 mum and which capture deuterium in the form of D atoms. (C) 2001 Elsevier Science B.V. All rights reserved.
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