Journal
DIAMOND AND RELATED MATERIALS
Volume 10, Issue 3-7, Pages 342-346Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/S0925-9635(00)00503-3
Keywords
diamond growth and characterization; microwave CVD deposition; numerical modeling
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This paper presents the results of numerical simulation of a microwave CVD reactor operating in CW and pulsed regimes. Dependencies of discharge parameters on the hydrogen pressure and microwave power have been studied. The possibility to use the pulse-periodic regime of discharge for deposition of diamond films has been analyzed. It is shown that a pulsed discharge may be used to improve the quality and increase the growth rate of the films. (C) 2001 Elsevier Science B.V. All rights reserved.
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