Journal
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
Volume 1, Issue 1, Pages 39-42Publisher
AMER SCIENTIFIC PUBLISHERS
DOI: 10.1166/jnn.2001.013
Keywords
thermal conductivity; Ge quantum dot; Si/Ge superlattices; anistropy
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We report the first experimental results on the temperature dependent in-plane and cross-plane thermal conductivities of a symmetrically strained Si/Ge superlattice and a Ge quantum-dot superlattice measured by the two-wire 3omega method. The measured thermal conductivity values are highly anisotropic and are significantly reduced compared to the bulk thermal conductivity of the structures. The results can be explained by using heat transport models based on the Boltzmann transport equation with partially diffusive scattering of the phonons at the superlattice interfaces.
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