Journal
SOLAR ENERGY MATERIALS AND SOLAR CELLS
Volume 67, Issue 1-4, Pages 331-335Publisher
ELSEVIER
DOI: 10.1016/S0927-0248(00)00300-7
Keywords
Cu(In; Ga)Se-2; thin film; electric property
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An efficiency of over 18% have been achieved in Cu(In,Ga)Se, (CIGS) thin-film solar cells. Solar cell parameters were estimated for the cells with efficiencies of more and less than 18%. A diode quality factor n and forward current (saturated current) J(0) of the cell with over 18% efficiency are lower than those with below 18% efficiency. This would be attributed to sufficient coverage of the CdS film with excellent uniformity as a buffer and/or window layer over the CIGS film because the process of CdS film formation was improved. (C) 2001 Elsevier Science B.V. All rights reserved.
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