Journal
SOLAR ENERGY MATERIALS AND SOLAR CELLS
Volume 67, Issue 1-4, Pages 137-143Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/S0927-0248(00)00273-7
Keywords
Cu(In,Ga)Se-2; solar cells; recombination; defects; tunneling
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Electrical analysis of Cu(In,Ga)Se-2-based heterojunction devices shows that recombination in the space-charge region is the dominant recombination mechanism which determines the open-circuit voltage of these devices. We identify a specific defect as the relevant recombination center. The concentration of this defect varies with the Ga-content in the absorber alloy with the highest concentration in pure CuGaSe2. In this material, tunneling-enhanced recombination plays a major role for recombination. (C) 2001 Elsevier Science B.V. All rights reserved.
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