Journal
JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA
Volume 114, Issue -, Pages 895-900Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/S0368-2048(00)00393-5
Keywords
X-ray emission spectra; X-ray photoelectron spectroscopy; mathematical simulation of the spectra; porous silicon
Categories
Ask authors/readers for more resources
The phase composition of the surface layers in porous silicon (por-Si) is determined by analysis of the density of states in the valence band using ultrasoft X-ray emission spectroscopy (USXES) and X-ray photoelectron spectroscopy (XPS) of the core levels. Since porous silicon demonstrates instability of its properties the investigations of the changes in its phase composition under atmosphere exposure (e.g. low-temperature anneals in an oxygen flow) have been made. Phase analysis by USXES is performed with the help of a specially elaborated mathematical technique using expansion of the experimental spectrum by the spectra of some standard samples, c-Si and c-SiO2 as well as disordered phases of these species (by USXES) and low-oxidized defect silicon (by USXES and XPS) have been detected in the surface layers of per-Si. Some changes in the composition were found in the samples annealed in oxygen at various temperatures. (C) 2001 Elsevier Science B.V. All rights reserved.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available