Wavelength control from 1.25 to 1.4 μm in InxGa1-xAs quantum dot structures grown by metal organic chemical vapor deposition

This letter reports on the realization of long-wavelength InGaAs quantum dots (QDs) fabricated by metal organic chemical vapor deposition. By controlling the In incorporation in the QD layers and/or in the barrier embedding the QDs, we are able to tune the wavelength emission continuously from 1.25 to 1.4 mum at room temperature. Efficient stacking of dots emitting at 1.3 mum is also demonstrated. (C) 2001 American Institute of Physics.