Journal
PHYSICAL REVIEW LETTERS
Volume 86, Issue 11, Pages 2381-2384Publisher
AMERICAN PHYSICAL SOC
DOI: 10.1103/PhysRevLett.86.2381
Keywords
-
Categories
Ask authors/readers for more resources
We report first quantitative measurements by energy-selected imaging in a transmission electron microscope of In segregation within an uncapped islanded In0.25Ga0.75As layer grown epitaxially on GaAs. This layer has the lowest In concentration at which islanding occurs and, then, only after a flat similar to3 nm alloy layer has been formed. In buildup by segregation at the surface of this initial flat layer is considered the driving force for islanding and, importantly, the segregation process introduces the characteristic delay seen before the Stranski-Krastanow transition. We observe strong inhomogeneous In enrichment within the islands (up to x(In) approximate to 0.6 at the apex) and a simultaneous In depletion in the remaining flat layer.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available