Journal
SYNTHETIC METALS
Volume 119, Issue 1-3, Pages 463-464Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/S0379-6779(00)00714-1
Keywords
polythiophene and derivatives; conductivity; thin film transistors
Ask authors/readers for more resources
The charge carrier mobility in bulk samples of alpha,omega -dihexylquaterthiophene has been determined as a function of temperature using the Pulse-Radiolysis Time-Resolved-Microwave-Conductivity and Thin Film Transistor (TFT) techniques. The mobility values obtained at room temperature were approximate to0.01 cm(2)/Vs for both methods However upon cooling to 150 K the FET mobility decreases by an order of magnitude whereas the TRMC mobility remains almost constant. This behaviour is interpreted as an effect of the frequency of the electric field that is used in the experiments and could be described theoretically using an over-the-barrier hopping model for the mobility.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available