Journal
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
Volume 40, Issue 3B, Pages L275-L278Publisher
INST PURE APPLIED PHYSICS
DOI: 10.1143/JJAP.40.L275
Keywords
diamond; UV; light-emitting diode; free exciton; electroluminescence; sulfur-doping; n-type conductivity
Categories
Ask authors/readers for more resources
Free-exciton recombination emission of 235 nm in wavelength is obtained by current injection at room temperature from a diamond-based pn junction diode composed of B-doped crystal grown by high-temperature, high-pressure synthesis and a S-doped homoepitaxial layer grown by the chemical vapor deposition method. The diode shows a clear rectification characteristic and a high external quantum efficiency of excitonic emission, 8 x 10(-5), which indicates that the excitonic emission of diamond is a good candidate for application to semiconductor UV-light-emitting devices. A defect-induced light emission and large leakage current indicate that a higher UV emission efficiency is expected with improvement of the junction quality.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available