Journal
JOURNAL OF APPLIED PHYSICS
Volume 89, Issue 6, Pages 3295-3300Publisher
AMER INST PHYSICS
DOI: 10.1063/1.1347002
Keywords
-
Categories
Ask authors/readers for more resources
Far infrared (FIR) absorption, reflection, and transmission in heavily doped p-GaAs multilayer structures have been measured for wavelengths 20-200 mum and compared with the calculated results. Both Be (in the range 3x10(18)-2.6x10(19) cm(-3)) and C (1.8x10(18)-4.7x10(19) cm(-3))-doped structures were studied. It is found that the observed absorption, reflection, and transmission are explained correctly by the model with a dominant role of free-carrier absorption in highly doped regions. High reflection from heavily doped thick layers is attractive for the resonant cavity enhanced FIR detectors. (C) 2001 American Institute of Physics.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available