Engineered Schottky barriers on n-In0.35Ga0.65As

The Schottky barrier height in Al/n-In0.35Ga0.65As was engineered using thin p-type near-interface In0.35Ga0.65As layers grown by molecular beam epitaxy. The effect of the thickness and doping level of the p-type layer on the barrier height was also studied by computer simulation. A good agreement was obtained between the calculated and experimental barrier height values. An experimental Schottky barrier height of 0.67 eV with an ideality factor of 1.15 has been achieved. (C) 2001 Elsevier Science B.V. All rights reserved.