Journal
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume 40, Issue 4B, Pages 2996-2999Publisher
INST PURE APPLIED PHYSICS
DOI: 10.1143/JJAP.40.2996
Keywords
GaN; photodetector; MSM; Schottky
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The characterizations of n-type doped GaN, p-type doped GaN and n-type doped In0.2Ga0.8N Schottky metal-semiconductor-metal (MSM) photodetectors were reported. The epilayers were grown on sapphire by metalorganic chemical vapor deposition (MOVCD). Schottky contacts were fabricated using Au, Ti, Ni and Pt metals. The dark and illuminated current-voltage characteristics of GaN and InGaN MSM photodetectors with different Schottky metals were studied. The n-GaN MSM photodetectors with Au Schottky contacts showed better responsivity than those with other metals and they ere also better than Au/p-GaN and Ti/n-In(0.2)G(0.8)N MSMs. The effects of the pitch width between the interdigitate fingers and the thickness of Schottky metals on the characteristics of photocurrents were also studied.
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