Journal
PHYSICAL REVIEW LETTERS
Volume 86, Issue 15, Pages 3368-3371Publisher
AMERICAN PHYSICAL SOC
DOI: 10.1103/PhysRevLett.86.3368
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We present a technique for obtaining atomic resolution ultrahigh vacuum scanning tunneling microscopy images of diamond (100) films, and use this technique to study the temperature dependence of the etching of epitaxial diamond (100) films by atomic hydrogen. We find that etching by atomic hydrogen is highly temperature dependent, resulting in a rough and pitted surface at T approximate to 200 and 500 degreesC, respectively. At T approximate to 1000 degreesC etching results in a smooth surface and is highly anisotropic, occurring predominantly in the direction of dimer rows. This observation supports recent theoretical models that propose anisotropic etching as the mechanism for the growth of smooth diamond (100) films.
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