4.6 Article

Transport properties in doped Mott insulator epitaxial La1-xTiO3+δ thin films -: art. no. 161103

Journal

PHYSICAL REVIEW B
Volume 63, Issue 16, Pages -

Publisher

AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.63.161103

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We report on the transport properties, Hall effect and resistivity, of epitaxial La1-yTiO3+delta thin films. The materials, grown by molecular beam epitaxy, display a temperature independent Hall coefficient and a characteristic T-2 dependence of the resistivity over a wide temperature range, extending from a few Kelvin to 500 K. These transport properties are shown to be consistent with small polaron metallic conduction with a dominant optical phonon mode whose energy, (h) over bar omega (0) = 80 K, is characteristic of the tilt/rotation of the oxygen octahedra in perovskite materials.

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