Journal
JOURNAL OF APPLIED PHYSICS
Volume 89, Issue 8, Pages 4341-4348Publisher
AMER INST PHYSICS
DOI: 10.1063/1.1351861
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We have studied the influence of difference growth conditions on the two-dimensional to three-dimensional growth mode transition for a specific class of InGaAs/GaAs quantum dots (QDs) optimized for applications to optical devices operating around 1.3 mum (In content x approximate to0.5). The dots are grown by low-pressure metalorganic chemical vapor deposition on GaAs substrates. We demonstrate that the critical layer thickness corresponding to optimized single-QD layer structures (i.e., with reduced wetting layer thickness and high uniformity) can be controlled by kinetic effects. The optimized growth conditions allow us to grow six-layers stacked QD structures as active material for the fabrication of a light emitting devices operating around 1.3 mum at room temperature. (C) 2001 American Institute of Physics.
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