Journal
APPLIED PHYSICS LETTERS
Volume 78, Issue 16, Pages 2288-2290Publisher
AMER INST PHYSICS
DOI: 10.1063/1.1361274
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First-principles total energy calculations performed for [0001] screw dislocations in GaN with \b\ = c indicate that a model with a helical Ga-filled core is more stable than the hollow core model in Ga-rich conditions. This model gives rise to electronic states dispersed throughout the band gap. Such a dislocation is therefore expected to be a very strong center for nonradiative recombination and a pathway for current leakage. (C) 2001 American Institute of Physics.
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