The thermophysical properties (heat capacity and thermal expansion) of single-crystal silicon

Fragmentary investigations of the heat capacity and of the thermal expansion coefficient of single crystals of high-purity silicon are reported. The results of these investigations are compared with the entire body of data on these properties available to date. Generalized equations expressing the heat capacity and thermal expansion coefficient of silicon as functions of temperature are obtained for the temperature ranges of 298-1690 and 100-1400 K, respectively. The Debye temperature of crystalline silicon and the root-mean-square dynamic displacement of atoms from the equilibrium position in its crystal lattice are calculated using the available data on thermal expansion.