Journal
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES
Volume 81, Issue 5, Pages 453-460Publisher
TAYLOR & FRANCIS LTD
DOI: 10.1080/13642810108225442
Keywords
-
Ask authors/readers for more resources
Experimental evidence demonstrates that surface states and minority-carrier injection are simultaneously responsible for the anomalous capacitance-voltage (C-V) characteristics of platinum-GaN Schottky diodes. For diodes exhibiting low surface states, a transition point in the C-V curves is identified, which is attributed to tunnelling.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available