Journal
PHYSICAL REVIEW LETTERS
Volume 86, Issue 19, Pages 4342-4345Publisher
AMERICAN PHYSICAL SOC
DOI: 10.1103/PhysRevLett.86.4342
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The atomic scale oxidation of the alpha -SiC(0001)-(3 x 3) surface is investigated by atom-resolved scanning tunneling microscopy, core level synchrotron radiation based photoemission spectroscopy, and infrared absorption spectroscopy. The results reveal that the initial oxidation takes place through the relaxation of lower layers, away from the surface dangling bond, in sharp contrast to silicon oxidation.
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