Valence evaluation of cerium ions in Ce-doped α-sialon by electron energy loss spectra

For a long time cerium ions, both Ce3+ and Ce4+, have not been considered to be able to enter the interstitial sites in an alpha -sialon structure until recent successes in the preparation of cerium-doped alpha -sialon materials using CeO2 as the starting powder. It is then of great importance and necessity to know the chemical valence of these incorporated cerium ions. Meanwhile, the specific structure of the interstices in alpha -sialon provides quite a different chemical environment upon which the electronic structures of cerium ions could be different from those ever reported in, for instance, metallic compounds and oxides. Electron energy loss spectra (EELS) in the M-edge region of rare-earth elements carries information on the initial state 4f occupancy. We have acquired and examined the M-4,M-5-edge spectra of cerium at different locations in the microstructure. It has been found that all the Ce(IV) ions in the intergranular glass and the majority inside the alpha -sialon crystals have been reduced to Ce(III) while there exist inside the crystal cerium ions showing 4f(0) initial-state peaks on the EELS spectrum. The 4f(0) peak locates at about 0.6 eV higher in energy than that for CeO2. An increased and possibly by far the highest weight of f(0) state is derived for Ce(IV) ions in alpha -sialon. The spectral evidences confirm the general suggestion of the unstability of Ce(IV) ions with silicon nitride. (C) 2001 American Institute of Physics.