Journal
APPLIED PHYSICS LETTERS
Volume 78, Issue 21, Pages 3316-3318Publisher
AMER INST PHYSICS
DOI: 10.1063/1.1372358
Keywords
-
Categories
Ask authors/readers for more resources
We report on the production of ordered assemblies of silicon nanostructures by means of irradiation of a Si (100) substrate with 1.2 keV Ar+ ions at normal incidence. Atomic force and high-resolution transmission electron microscopies show that the silicon structures are crystalline, display homogeneous height, and spontaneously arrange into short-range hexagonal ordering. Under prolonged irradiation (up to 16 h) all dot characteristics remain largely unchanged and a small corrugation develops at long wavelengths. We interpret the formation of the dots as a result of an instability due to the sputtering yield dependence on the local surface curvature. (C) 2001 American Institute of Physics.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available