Journal
APPLIED PHYSICS LETTERS
Volume 78, Issue 22, Pages 3469-3471Publisher
AMER INST PHYSICS
DOI: 10.1063/1.1375842
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We demonstrated the 1.52 mum light emission at room temperature from self-assembled InAs quantum dots embedded in the In0.45Ga0.55As strain-reducing layer. By capping InAs quantum dots with an InGaAs strain-reducing layer instead of GaAs, the photoluminescence peak of InAs quantum dots can be controlled by changing the indium composition of the InGaAs strain-reducing layer. The full width at half maximum is as narrow as 22 meV. The wavelength of 1.52 mum is the longest wavelength so far achieved in self-assembled InAs quantum dots, which would be promising to quantum-dot lasers on GaAs substrate for application to light sources in long-wavelength optical communication systems. (C) 2001 American Institute of Physics.
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