4.7 Article

Preparation of copper oxide thin film by the sol-gel-like dip technique and study of their structural and optical properties

Journal

SOLAR ENERGY MATERIALS AND SOLAR CELLS
Volume 68, Issue 3-4, Pages 307-312

Publisher

ELSEVIER SCIENCE BV
DOI: 10.1016/S0927-0248(00)00364-0

Keywords

sol-gel-like dip technique; baking temperature (T-B); XRD; optical direct band gap

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Copper oxide films are prepared using a methanolic solution of cupric chloride (CuCl2 2H(2)O) by the sol-gel-like dip technique at different baking temperatures. XRD study confirms that the films are of Cu2O phase when prepared at a baking temperature of 360 degreesC and CuO phase when prepared at 400-500 degreesC baking temperature. The optical direct band gap energies for Cu2O and CuO films calculated from optical absorption measurements are 2.10 and 1.90eV, respectively, which are quite comparable with the reported values. (C) 2001 Elsevier Science B.V. All rights reserved.

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