Journal
IEEE ELECTRON DEVICE LETTERS
Volume 22, Issue 6, Pages 296-298Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/55.924847
Keywords
CMOS reliability; dielectric breakdown; MOS devices; reliability modeling; ultrathin gate oxide
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A new analytic cell-based approach to the modeling of the oxide breakdown statistics is presented. The nem model has the same predictive power as the standard percolation approach and the advantage of providing simple analytic results The scaling with oxide thickness of the Weibull slope and the mean critical density of defects at breakdown are accounted for correctly.
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