Magnetoelastic sensor based on GMI of amorphous microwire

The magnetoelastic sensor based on the stress dependence of the GMI effect in Co68.5Mn6.5Si10B15 amorphous microwire has been introduced. This amorphous microwire after adequate heat treatment shows the maximum GMI ratio (DeltaZ/Z)(m) up to around 130%. GMI effect of this microwire has been found to be affected by the magnetoelastic anisotropy induced in the sample by the applied tensile stress. This stress dependence of the GMI induces changes on the ac voltage measured between the ends of the sample placed in the magnetic field under applied tensile stress. When the sample is under a load of 3 g such change of the ac voltage across the microwire is about 3.5 V. (C) 2001 Elsevier Science B.V. All rights reserved.