Fowler-Nordheim conduction in polysilicon (n+)-oxide-silicon (p) structures:: Limit of the classical treatment in the barrier height determination

Fowler-Nordheim current in Si-poly (n(+))-SiO2-Si(p) structures, with an oxide thickness varying between 3 and 12 nm, has been measured and numerically computed with the exact electric field in the oxide, the field dependence of the barrier shape with the image force, and the temperature effects. The fit of the experimental data leads to an accurate determination of the electron affinity difference and the barrier height at the emitting Si-poly (n(+))-gate-electrode-oxide interface. The evolution of these two parameters with temperature is discussed in relation with the oxide thickness. (C) 2001 American Institute of Physics.