Journal
SPECTROCHIMICA ACTA PART B-ATOMIC SPECTROSCOPY
Volume 56, Issue 6, Pages 743-751Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/S0584-8547(01)00193-8
Keywords
indium-tin-oxide films; pulsed laser deposition; optical emission spectroscopy; plasma diagnostics
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We performed optical emission spectroscopy to monitor the plasma produced during the ablation of indium-tinoxide targets under different oxygen pressure conditions using a pulsed UV laser. Molecular bands of InO were identified in the fluorescent spectra produced by pulsed laser ablation. InO line monitoring allowed obtaining the optimal conditions for good-quality ITO film deposition. We demonstrated that it is possible to correlate InO line spectroscopic parameters with the conditions required to fabricate a high-conductivity and high-transparent ITO thin film. In particular, low resistivity (10(-4) to 10(-3) Omega cm) was obtained in films deposited at room temperature by regulating oxygen pressure into the chamber in order to keep the InO line amplitude at a predetermined value. (C) 2001 Elsevier Science B.V. All rights reserved.
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