Journal
IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS
Volume 37, Issue 4, Pages 1062-1066Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/28.936397
Keywords
capacitance measurement; DMOS; measurement; on-state capacitances
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The measurement principle of the input and reverse transfer capacitance is shown. Function, stability, and operation of the measurement circuits are discussed. The on-state capacitances of a power DMOS transistor were measured under high current conditions of up to 250 A. A strong nonlinear characteristic is observed.
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