Journal
MATERIALS RESEARCH BULLETIN
Volume 36, Issue 9, Pages 1629-1637Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/S0025-5408(01)00641-9
Keywords
oxides; semiconductors; thin films; optical properties
Categories
Ask authors/readers for more resources
For Bi2O3 thin films, the influence of preparation conditions on the optical absorption, in the spectral range of 280-1260 nm, was investigated. Bi2O3 films (d = 0.07-1.50 mum) were prepared by thermal oxidation, in air, of vacuum evaporated Bi films. Glass and mica substrates were used. Structural investigations (performed by X-ray diffraction and optical polarizing microscopy) showed that films have a polycrystalline and multiphasic structure. The values of energy gap, E-g (direct transitions), calculated from the absorption spectra, ranged between 2.40 and 3.96 eV. The values of E-g for Bi2O3 films are strongly influenced by the heat treatment characteristics, which determine the pi;ase composition of samples. (C) 2001 Elsevier Science Ltd. All rights reserved.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available