Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 48, Issue 7, Pages 1374-1379Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/16.930654
Keywords
modeling; MOSFET; parameter extraction; RF; RF CMOS; small-signal model; substrate
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We propose a physically acceptable small-signal model incorporating substrate effects, in order to eliminate the severe frequency-dependence of the intrinsic drain-source resistance observed from a conventional model of RF Si MOSFETs, This model is based on the substrate network where a parallel RC circuit is connected in series with the drain junction capacitance. It is demonstrated that the substrate effects result in the frequency dispersion of the effective drain-source resistance and capacitance below 10 GHz, An accurate extraction technique using a simple curve-fit approach is developed to determine substrate parameters directly, and their bulk voltage-dependencies are presented in detail. The validity of this model is partially proved by finding intrinsic parameters exhibiting frequency-independence up to 10 GHz. Better agreement with measured S-parameters is achieved by using the new substrate model rather than the conventional one, verifying the accuracy of the physical model and extraction technique.
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