☆ 4.4 Article Proceedings Paper

X-ray reciprocal space mapping studies of strain relaxation in thin SiGe layers (≤ 100 nm) using a low temperature growth step

JOURNAL OF CRYSTAL GROWTH (2001)

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X-ray reciprocal space mapping studies of strain relaxation in thin SiGe layers (≤ 100 nm) using a low temperature growth step

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