4.4 Article

Study of microstructure and resistivity evolution for electroplated copper films at near-room temperature

Journal

MICROELECTRONICS JOURNAL
Volume 32, Issue 7, Pages 579-585

Publisher

ELSEVIER ADVANCED TECHNOLOGY
DOI: 10.1016/S0026-2692(01)00035-0

Keywords

copper metallization; electroplating; self-annealing; AFM; stress; resistivity

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A study on the self-annealing of various electroplated (ECP) blanket copper films of different thickness is performed on 8 wafers. Uncorrelated evolution of sheer resistance/resistivity and stress as a function of time has been exhibited. The initiation of self-annealing was faster for thicker ECP Cu films. These thicker films demonstrated a higher fraction of sheet resistance and resistivity drop as compared to thinner ones. They recorded a lower residual stress as well. One important observation is that the decrease of the resistivity during self-annealing correlates well with an abrupt rise in its standard deviation, with the resistivity measurements taken evenly across the entire wafer surface. Non-uniform distribution in grain size and the occurrence of grain growth when the film starts to self-anneal is speculated to be the cause for this observation. This is further supported by the AFM results. (C) 2001 Elsevier Science Ltd. Ah rights reserved.

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